2SA1356
Key Features
- Low saturation voltage: VCE (sat) = -0.32 V (typ.) (IC = -500 mA, IB = -50 mA)
- High collector power dissipation: PC = 1.2 W (Ta = 25°C)
- Part: 2SA1356
- Description: Silicon PNP Epitaxial Type Transistor
- Category: Transistor
- Manufacturer: Toshiba
- Size: 124.40 KB
Datasheets by Manufacturer
| Part Number | Manufacturer | Description |
|---|---|---|
| 2SA1352 | Inchange Semiconductor | Silicon PNP Power Transistor |
| 2SA1355 | Inchange Semiconductor | POWER TRANSISTOR |
| 2SA1358-Z | Inchange Semiconductor | PNP Transistor |
| 2SA1357 | Inchange Semiconductor | Silicon PNP Power Transistor |
| 2SA1357 | JCET | PNP Transistor |