2SA1356 - Silicon PNP Epitaxial Type Transistor

Toshiba

Datasheet Details

Part number	2SA1356
Manufacturer	Toshiba
File Size	124.40 KB
Description	Silicon PNP Epitaxial Type Transistor
Datasheet	2SA1356 Datasheet

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Other Datasheets by Toshiba

Part Number	Description
2SA1357	Silicon PNP Epitaxial Type Transistor
2SA1358	Silicon PNP Transistor
2SA1359	Silicon PNP Transistor
2SA1300	TRANSISTOR
2SA1304	TRANSISTOR

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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1356 Audio Power Amplifier Applications 2SA1356 Unit: mm • Low saturation voltage: VCE (sat) = −0.32 V (typ.) (IC = −500 mA, IB = −50 mA) • High collector power dissipation: PC = 1.2 W (Ta = 25°C) • Complementary to 2SC3419 Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −40 V Collector-emitter voltage VCEO −40 V Emitter-base voltage VEBO −5 V Collector current IC −800 mA Base current IB −80 mA Collector power dissipation Ta = 25°C Tc = 25°C PC 1.2 W 5 JEDEC ― Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C JEITA TOSHIBA ― 2-8H1A Note: Using continuously under heavy loads (e.g.