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Ordering number:ENN6178A
P-Channel Silicon MOSFET
2SJ502
Ultrahigh-Speed Switching Applications
Features
· Low ON-resistance. · Ultrahigh-speed switching. · 4V drive.
Package Dimensions
unit:mm 2091A
[2SJ502]
0.5
0.4 3 0.16
0 to 0.1
0.5
1
0.95 0.95 2 1.9 2.9
1.5
2.5
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions
1 : Gate 2 : Source 3 : Drain SANYO : CP
0.8 1.1
Ratings –30 ±20 –0.5 –2.0 0.
2SJ502 Datasheet
