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SST2630 - N-Ch Enhancement Mode Power MOSFET

General Description

The SST2630 provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness.

The SOT-26 package is universally used for all commercialindustrial surface mount applications.

Key Features

  • Low on-resistance Capable of 2.5V gate drive Low drive current.

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SST2602 N-Channel Enhancement Mode Power MosFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SST2630 3.8A , 100V , RDS(ON) 130 mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION The SST2630 provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness. The SOT-26 package is universally used for all commercialindustrial surface mount applications. FEATURES Low on-resistance Capable of 2.5V gate drive Low drive current MARKING 2630 = Date Code SOT-26 A E L B F CH DG K J REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.60 3.00 1.40 1.80 1.30 MAX. 1.90 REF. 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0 0.10 0.60 REF. 0.12 REF. 0° 10° 0.95 REF.