SemiHow HCD6N70S
700V N-Channel Super Junction MOSFET
| Part No. | HCD6N70S |
|---|---|
| Datasheet | HCD6N70S Download |
| Manufacturer |  SemiHow |
| Description | 700V N-Channel Super Junction MOSFET |
| Buy | Stock & Price |
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 7 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ 7\S #9GS=10V 100% Avalanche Tested BVDSS = 700 V RDS(on) typ ȍ ID = 3.0 A D-PAK I-PAK 2 1 3 HCD6N70S 1 2 3 HCU6N70S 1.Gate 2. Drain 3. SourceABSOLUTE MAXIMUM RATINGS
TC=25 unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25) – Continuous (TC = 100) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 700 3.0 1.9 8.0 ρ20 25 0.9 0.1 50 Power Dissipation (TA = 25)* PD Power Dissipation (TC = 25) - Derate above 25 2.1 28 0.22 TJ, TSTG TL Operating and Storage Temperature Range Maximum...
