HCD6N70S - 700V N-Channel Super Junction MOSFET

SemiHow

Key Features

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 7 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested BVDSS = 700 V RDS(on) typ ȍ ID = 3.0 A D-PAK I-PAK 2 1 3 HCD6N70S 1 2 3 HCU6N70S 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter.

HCD6N70S 700v n-channel super junction mosfet by SemiHow - Datasheet Preview

Datasheet Details

Part number	HCD6N70S
Manufacturer	SemiHow
File Size	420.13 KB
Description	700V N-Channel Super Junction MOSFET
Datasheet	HCD6N70S Datasheet

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HCD6N70S_HCU6N70S June 2015 HCD6N70S / HCU6N70S 700V N-Channel Super Junction MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 7 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested BVDSS = 700 V RDS(on) typ ȍ ID = 3.0 A D-PAK I-PAK 2 1 3 HCD6N70S 1 2 3 HCU6N70S 1.Gate 2. Drain 3.