HCD80R650E - N-Channel MOSFET

Features

 Very Low FOM (RDS(on) X Qg)  Extremely low switching loss  Excellent stability and uniformity  100% Avalanche Tested Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 850 8 0.65 12 Unit V A Ω nC.

SemiHow

Datasheet Details

Part number	HCD80R650E
Manufacturer	SemiHow
File Size	685.00 KB
Description	N-Channel MOSFET
Datasheet	HCD80R650E Datasheet
Additional preview pages of the HCD80R650E datasheet.

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Full PDF Text Transcription

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HCD80R650E Super Junction MOSFET March 2017 HCD80R650E 800V N-Channel Super Junction MOSFET Features  Very Low FOM (RDS(on) X Qg)  Extremely low switching loss  Excellent stability and uniformity  100% Avalanche Tested Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 850 8 0.

Published: Apr 14, 2017 |