SemiHow HCD80R650E
N-Channel MOSFET
| Part No. | HCD80R650E |
|---|---|
| Datasheet | HCD80R650E Download |
| Manufacturer |  SemiHow |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Very Low FOM (RDS(on) X Qg)● Extremely low switching loss
● Excellent stability and uniformity
● 100% Avalanche Tested
KEY PARAMETERS
Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 850 8 0.65 12 Unit V A Ω nC Application● Switch Mode Power Supply (SMPS)
● Uninterruptible Power Supply (UPS)
● Power Factor Correction (PFC)
● Motor Control & LED Lighting Power
● DC-DC Converters Package & Internal Circuit D-PAK
ABSOLUTE MAXIMUM RATINGS
TJ=25℃ unless otherwise specified Symbol Parameter Value VDSS VGS ID IDM EAS dv/dt dv/dt PD TJ, TSTG TL Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Single Pulsed Avalanche Energy (Note 2) MOSFET dv/dt ruggedness, VDS=0…640V Reverse diode dv/dt, VDS=0…640V, IDS≤ID Power Dissipation (TC
