Full PDF Text Transcription for HFS7N80 (Reference)
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HFS7N80. For precise diagrams, and layout, please refer to the original PDF.
HFS7N80 July 2005 BVDSS = 800 V HFS7N80 800V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Tec...
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New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 35 nC (Typ (Typ.) ) Extended Safe Operating Area Lower RDS(ON) : 1.55 ȍ (Typ.) @VGS=10V 100% Avalanche Tested TC=25 unless otherwise specified RDS(on) typ = 1.55 ȍ ID = 7.0 A TO-220F 1 2 3 1.Gate 2. Drain 3.
HFS7N80 Datasheet
