HFU1N60 - N-Channel MOSFET

Product Overview

SemiHow

Part number	HFU1N60
Manufacturer	SemiHow
File Size	168.10 KB
Description	N-Channel MOSFET
Datasheet	HFU1N60 Datasheet
Additional preview pages of the HFU1N60 datasheet.

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 4.0 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested D-PAK I-PAK 2 1 3 HFD1N60 1 2 3 HFU1N60 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain.

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Published: Jun 7, 2015 |