Datasheet Summary
HFD1N60_HFU1N60
Dec 2005
HFD1N60 / HFU1N60
600V N-Channel MOSFET
BVDSS = 600 V RDS(on) typ ȍ ID = 0.9 A
Features
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 4.0 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested
D-PAK I-PAK
1 3
HFD1N60
2 3
1.Gate 2. Drain 3....