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HFU1N60S - N-Channel MOSFET

Key Features

  •  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 3.0 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 10 Ω (Typ. ) @VGS=10V  100% Avalanche Tested D-PAK I-PAK 2 1 3 HFD1N60S 1 2 3 HFU1N60S 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drai.

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Datasheet Details

Part number HFU1N60S
Manufacturer SemiHow
File Size 692.56 KB
Description N-Channel MOSFET
Datasheet download datasheet HFU1N60S Datasheet

Full PDF Text Transcription for HFU1N60S (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HFU1N60S. For precise diagrams, and layout, please refer to the original PDF.

HFD1N60S / HFU1N60S Sep 2009 HFD1N60S / HFU1N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ = 10 Ω ID = 1.0 A FEATURES  Originative New Design  Superior Avalanche ...

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0 Ω ID = 1.0 A FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 3.0 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 10 Ω (Typ.) @VGS=10V  100% Avalanche Tested D-PAK I-PAK 2 1 3 HFD1N60S 1 2 3 HFU1N60S 1.Gate 2. Drain 3.

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