HFU1N60S Datasheet | SemiHow

HFD1N60S / HFU1N60S Sep 2009 HFD1N60S / HFU1N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ = 10 Ω ID = 1.0 A Features  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 3.0 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 10 Ω (Typ.) @VGS=10V  100% Avalanche Tested D-PAK I-PAK 1 3 HFD1N60S 1 2 3 1.Gate 2. Drain 3....