HFU1N65S Datasheet | SemiHow

HFD1N65S / HFU1N65S HFD1N65S / HFU1N65S 650V N-Channel MOSFET Features  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 3.0 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 10.5 Ω (Typ.) @VGS=10V April 2009 BVDSS = 650 V RDS(on) typ = 10.5 Ω ID = 0.9 A D-PAK I-PAK 1 3 HFD1N65S 1 2 3 1.Gate 2. Drain 3....