SemiHow HFU1N60F
600V N-Channel MOSFET
| Part No. | HFU1N60F |
|---|---|
| Datasheet | HFU1N60F Download |
| Manufacturer |  SemiHow |
| Description | 600V N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 3.7 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ 7\S #9GS=10V 100% Avalanche Tested D-PAK I-PAK 2 1 3 HFD1N60F 1 2 3 HFU1N60F 1.Gate 2. Drain 3. SourceABSOLUTE MAXIMUM RATINGS
TC=25 unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR PD Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25) – Continuous (TC = 100) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation (TA = 25)* Power Dissipation (TC = 25) - Derate above 25 600 1.0 0.6 4.0 ρ30 33 1.0 2.8 2.5 28 0.22 TJ, TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds -55 to +150...
