Full PDF Text Transcription for HFU1N60F (Reference)
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HFU1N60F. For precise diagrams, and layout, please refer to the original PDF.
HFD1N60F_HFU1N60F Sep 2015 HFD1N60F / HFU1N60F 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ ȍ ID = 1 A FEATURES Originative New Design Superior Avalanche Rug...
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ȍ ID = 1 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 3.7 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ 7S #9GS=10V 100% Avalanche Tested D-PAK I-PAK 2 1 3 HFD1N60F 1 2 3 HFU1N60F 1.Gate 2. Drain 3.
HFU1N60F Datasheet
