Datasheet Summary
HFD1N70 / HFU1N70
Dec 2008
HFD1N70 / HFU1N70
700V N-Channel MOSFET
BVDSS = 700 V RDS(on) typ = 14.0 Ω ID = 0.8 A
Features
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 4.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 14.0 Ω (Typ.) @VGS=10V 100% Avalanche Tested
D-PAK I-PAK
1 3
HFD1N70
1 2 3
1.Gate 2. Drain 3....