HFU1N65 - N-Channel MOSFET

SemiHow

Key Features

 Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 4.0 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 10.5 Ω (Typ. ) @VGS=10V  100% Avalanche Tested D-PAK I-PAK 2 1 3 HFD1N65 1 2 3 HFU1N65 1.Gate 2. Drain 3. Source D G S Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv.

HFU1N65 n-channel mosfet by SemiHow - Datasheet Preview

Datasheet Details

Part number	HFU1N65
Manufacturer	SemiHow
File Size	319.60 KB
Description	N-Channel MOSFET
Datasheet	HFU1N65 Datasheet

Full PDF Text Transcription for HFU1N65 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HFU1N65. For precise diagrams, and layout, please refer to the original PDF.

HFD1N65 / HFU1N65 April 2006 HFD1N65 / HFU1N65 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ = 10.5 Ω ID = 0.8 A FEATURES  Originative New Design  Superior Avalanche ...

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5 Ω ID = 0.8 A FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 4.0 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 10.5 Ω (Typ.) @VGS=10V  100% Avalanche Tested D-PAK I-PAK 2 1 3 HFD1N65 1 2 3 HFU1N65 1.Gate 2. Drain 3.

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