Datasheet Summary
HFD1N80 / HFU1N80
April 2006
HFD1N80 / HFU1N80
800V N-Channel MOSFET
BVDSS = 800 V RDS(on) typ = 13 Ω ID = 1.0 A
Features
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 7.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 13 Ω (Typ.) @VGS=10V 100% Avalanche Tested
D-PAK I-PAK
1 3
HFD1N80
1 2 3
1.Gate 2. Drain 3....