HFU3N80 - N-Channel MOSFET

Product Overview

SemiHow

Part number	HFU3N80
Manufacturer	SemiHow
File Size	1.14 MB
Description	N-Channel MOSFET
Datasheet	HFU3N80 Datasheet
Additional preview pages of the HFU3N80 datasheet.

 Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 17 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 4.0 Ω (Typ. ) @VGS=10V  100% Avalanche Tested D-PAK I-PAK 2 1 3 HFD3N80 1 2 3 HFU3N80 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-.

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Published: Jun 7, 2015 |