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HFU3N80 - N-Channel MOSFET

Key Features

  •  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 17 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 4.0 Ω (Typ. ) @VGS=10V  100% Avalanche Tested D-PAK I-PAK 2 1 3 HFD3N80 1 2 3 HFU3N80 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-.

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Datasheet Details

Part number HFU3N80
Manufacturer SemiHow
File Size 1.14 MB
Description N-Channel MOSFET
Datasheet download datasheet HFU3N80 Datasheet

Full PDF Text Transcription for HFU3N80 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HFU3N80. For precise diagrams, and layout, please refer to the original PDF.

HFD3N80/HFU3N80 Dec 2005 HFD3N80/HFU3N80 800V N-Channel MOSFET BVDSS = 800 V RDS(on) typ = 4.0 Ω ID = 2.5 A FEATURES  Originative New Design  Superior Avalanche Rugged ...

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= 2.5 A FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 17 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 4.0 Ω (Typ.) @VGS=10V  100% Avalanche Tested D-PAK I-PAK 2 1 3 HFD3N80 1 2 3 HFU3N80 1.Gate 2. Drain 3.

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