Full PDF Text Transcription for HFU4N50 (Reference)
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HFU4N50. For precise diagrams, and layout, please refer to the original PDF.
HFD4N50_HFU4N50 July 2005 HFD4N50 / HFU4N50 500V N-Channel MOSFET BVDSS = 500 V RDS(on) typ ȍ ID = 2.6 A FEATURES Originative New Design Superior Avalanche Rugg...
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ID = 2.6 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 13 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ 7S #9GS=10V 100% Avalanche Tested D-PAK I-PAK 2 1 3 HFD4N50 1 2 3 HFU4N50 1.Gate 2. Drain 3.
HFU4N50 Datasheet
