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HFU4N50 - N-Channel MOSFET

Datasheet Summary

Features

  • ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 13 nC (Typ. ) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ 7S #9GS=10V ‰ 100% Avalanche Tested D-PAK I-PAK 2 1 3 HFD4N50 1 2 3 HFU4N50 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-.

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Datasheet Details

Part number HFU4N50
Manufacturer SemiHow
File Size 241.17 KB
Description N-Channel MOSFET
Datasheet download datasheet HFU4N50 Datasheet
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HFD4N50_HFU4N50 July 2005 HFD4N50 / HFU4N50 500V N-Channel MOSFET BVDSS = 500 V RDS(on) typ ȍ ID = 2.6 A FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 13 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ 7S #9GS=10V ‰ 100% Avalanche Tested D-PAK I-PAK 2 1 3 HFD4N50 1 2 3 HFU4N50 1.Gate 2. Drain 3.
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