BSM50GAL120DN2 Description
Static Characteristics Gate threshold voltage Values typ. Switching Characteristics, Inductive Load at Tj = 125 °C Turn-on delay time Values typ. Unit Chopper Diode Chopper diode forward voltage VFC 2.3 1.8 2.8.
BSM50GAL120DN2 is IGBT manufactured by Siemens Semiconductor Group.
| Part Number | Description |
|---|---|
| BSM50GB120DN2 | IGBT |
| BSM50GB170DN2 | IGBT |
| BSM50GD120DN2 | IGBT |
| BSM50GD120DN2E3226 | IGBT |
| BSM50GD120DN2G | IGBT |
Static Characteristics Gate threshold voltage Values typ. Switching Characteristics, Inductive Load at Tj = 125 °C Turn-on delay time Values typ. Unit Chopper Diode Chopper diode forward voltage VFC 2.3 1.8 2.8.