The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
BSM 50 GD120DN2E3226
IGBT Power Module
• Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate • E3226: long terminals, limited current per terminal
Type BSM 50 GD120DN2E3226 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage
VCE
IC
Package ECONOPACK 2
Ordering Code C67070-A2514-A67
1200V 50A
Symbol
Values 1200 1200
Unit V
VCE VCGR VGE IC
RGE = 20 kΩ
Gate-emitter voltage DC collector current
± 20 A 50 45
TC = 25 °C TC = 80 °C
Pulsed collector current, tp = 1 ms
ICpuls
100 90
TC = 25 °C TC = 80 °C
Power dissipation per IGBT
Ptot
350
W + 150 -55 ... + 150 ≤ 0.35 ≤ 0.
BSM50GD120DN2E3226 Datasheet
