BSM50GD120DN2E3226
BSM50GD120DN2E3226 is manufactured by Siemens Semiconductor Group.
BSM 50 GD120DN2E3226
IGBT Power Module
- Power module
- 3-phase full-bridge
- Including fast free-wheel diodes
- Package with insulated metal base plate
- E3226: long terminals, limited current per terminal
Type BSM 50 GD120DN2E3226 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage
Package ECONOPACK 2
Ordering Code C67070-A2514-A67
1200V 50A
Symbol
Values 1200 1200
Unit V
VCE VCGR VGE IC
RGE = 20 kΩ
Gate-emitter voltage DC collector current
± 20 A 50 45
TC = 25 °C TC = 80 °C
Pulsed collector current, tp = 1 ms
ICpuls
100 90
TC = 25 °C TC = 80 °C
Power dissipation per IGBT
Ptot
W + 150 -55 ... + 150 ≤ 0.35 ≤ 0.7 2500 16 11 F 55 / 150 /...
