BSM50GD120DN2E3226 datasheet by Siemens Semiconductor Group (now Infineon).
| Part number | BSM50GD120DN2E3226 |
|---|---|
| Datasheet | BSM50GD120DN2E3226_SiemensSemiconductorGroup.pdf |
| File Size | 132.74 KB |
| Manufacturer | Siemens Semiconductor Group (now Infineon) |
| Description | IGBT |
|
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BSM 50 GD120DN2E3226 IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plate E3226: Creepage distance Clearance DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Semiconductor Group Tj Tstg RthJC RthJCD Vis 1 BSM 50 GD120DN2E3226 , at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate...
View all Siemens Semiconductor Group (now Infineon) datasheets
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