BSM50GD60DN2 Datasheet | Siemens Semiconductor Group

BSM 50 GD 60 DN2 IGBT Power Module - Power module - 3-phase full-bridge - Including fast free-wheel diodes - Package with insulated metal base plate Type BSM 50 GD 60 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 600 600 Unit V 600V 50A Package ECONOPACK 2K Ordering Code C67076-A2515-A67 VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current ± 20 A 50 TC = 40 °C Pulsed collector current, tp = 1 ms ICpuls TC = 40 °C Power dissipation per IGBT Ptot W + 150 -55 ... + 150 ≤ 0.6 ≤ 1.5 2500 16 11 F 55 / 150 / 56 sec Vac mm K/W °C TC = 25 °C Chip temperature Storage temperature Thermal resistance, chip...