BSM50GD60DN2E3226
BSM50GD60DN2E3226 is manufactured by Siemens Semiconductor Group.
IGBT Power Module
- Power module
- 3-phase full-bridge
- Including fast free-wheel diodes
- Package with insulated metal base plate
- E3226: long terminals, limited current per terminal Type BSM50GD60DN2E3226 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 600 600 Unit V
600V
50A
Package ECONOPACK 2
Ordering Code C67070-A2515-A67
VCE VCGR VGE IC
RGE = 20 kΩ
Gate-emitter voltage DC collector current
± 20 A 50
TC = 25 °C
Pulsed collector current, tp = 1 ms
ICpuls
TC = 25 °C
Power dissipation per IGBT
Ptot
W + 150 -55 ... + 150 ≤ 0.6 ≤ 1.5 2500 16 11 F 55 / 150 / 56 sec Vac mm K/W °C
TC = 25 °C
Chip...
