BSM50GB170DN2 Description
Static Characteristics Gate threshold voltage Values typ. Switching Characteristics, Inductive Load at Tj = 125 °C Turn-on delay time Values typ. Tj ≤ 150 °C 550 W Safe operating area IC = ƒ(VCE) parameter:.
BSM50GB170DN2 is IGBT manufactured by Siemens Semiconductor Group.
| Part Number | Description |
|---|---|
| BSM50GB120DN2 | IGBT |
| BSM50GAL120DN2 | IGBT |
| BSM50GD120DN2 | IGBT |
| BSM50GD120DN2E3226 | IGBT |
| BSM50GD120DN2G | IGBT |
Static Characteristics Gate threshold voltage Values typ. Switching Characteristics, Inductive Load at Tj = 125 °C Turn-on delay time Values typ. Tj ≤ 150 °C 550 W Safe operating area IC = ƒ(VCE) parameter:.