BSM50GB170DN2
BSM50GB170DN2 is manufactured by Siemens Semiconductor Group.
BSM 50 GB 170 DN2
IGBT Power Module Preliminary data
- Half-bridge
- Including fast free-wheeling diodes
- Package with insulated metal base plate
- RG on,min = 27 Ohm Type BSM 50 GB 170 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1700 1700 Unit V
Package HALF-BRIDGE 1
Ordering Code C67070-A2701-A67
1700V 72A
VCE VCGR VGE IC
RGE = 20 kΩ
Gate-emitter voltage DC collector current
± 20 A 72 50
TC = 25 °C TC = 80 °C
Pulsed collector current, tp = 1 ms
ICpuls
144 100
TC = 25 °C TC = 80 °C
Power dissipation per IGBT
Ptot
W + 150 -55 ... + 150 ≤ 0.25 ≤ 0.75 4000 20 11 F 55 / 150 / 56 Vac mm K/W °C
TC = 25 °C
Chip...
