BSM50GB120DN2
BSM50GB120DN2 is manufactured by Siemens Semiconductor Group.
BSM 50 GB 120 DN2
IGBT Power Module
- Half-bridge
- Including fast free-wheeling diodes
- Package with insulated metal base plate
Type BSM 50 GB 120 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage
Package HALF-BRIDGE 1
Ordering Code C67076-A2105-A70
1200V 78A
Symbol
Values 1200 1200
Unit V
VCE VCGR VGE IC
RGE = 20 kΩ
Gate-emitter voltage DC collector current
± 20 A 78 50
TC = 25 °C TC = 80 °C
Pulsed collector current, tp = 1 ms
ICpuls
156 100
TC = 25 °C TC = 80 °C
Power dissipation per IGBT
Ptot
W + 150 -55 ... + 150 ≤ 0.3 ≤ 0.6 2500 20 11 F 55 / 150 / 56 Vac mm K/W °C
TC = 25 °C
Chip temperature Storage temperature Thermal...
