SVG108R5NAM Description
SVG108R5NAM(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in UPS, Power Management for Inverter Systems.
SVG108R5NAM Key Features
- 94A, 100V, RDS(on)(typ.)=7.2m@VGS=10V
- Low gate charge
- Low Crss
- Fast switching
- Improved dv/dt capability