SVG108R5NAT Datasheet | Silan Microelectronics

Silan Microelectronics SVG108R5NAM(T)_Datasheet 94A, 100V N-CHANNEL MOSFET DESCRIPTION SVG108R5NAM(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in UPS, Power Management for Inverter Systems. Features - 94A, 100V, RDS(on)(typ.)=7.2m@VGS=10V - Low gate charge - Low Crss - Fast switching - Improved dv/dt capability 1 3 1. Gate 2. Drain 3.Source 123 TO-251D-3L TO-220-3L ORDERING INFORMATION Part No. SVG108R5NAM SVG108R5NAT Package TO-251D-3L TO-220-3L Marking 108R5NAM 108R5NAT Hazardous Substance Control Halogen free Pb free Packing Type Tube...