SiLM27624LN Datasheet | Sillumin

DESCRIPTION FEATURES The Si LM27624LN is a dual-channel, high-speed, low-side gate drivers that can effectively drive MOSFET and IGBT power switches. Using a design that inherently minimizes shoot-through current, Si LM27624LN can source and sink high peak-current pulses into capacitive loads offering rail-to-rail drive capability and extremely small propagation delay, typically 20ns. The Si LM27624LN provides 5.0 A source, 5.0 A sink peak-drive current capability at 12V VDD supply. APPLICATIONS - Switching mode power supplies - DC-to-DC converters - Motor Control, solar power - Gate drive for emerging wide band-gap power devices such as Ga N - Two independent gate drive channels - 5.0 A peak source and 5.0 A peak sink current drive capability - Fast propagation delay (20ns typical) - Fast rise and fall time (7ns and 6ns typical) - 4.5 to 30V single supply range - Under-voltage lockout - TTL and CMOS patible input logic threshold - Ability to handle negative voltages (-5V) at inputs - 2ns typical delay matching between two channels - Two outputs are paralleled for higher drive current - Outputs held in low when inputs floating - Operating temperature range of -40°C to 150°C - SOP8 package TYPICAL APPLICATION CIRCUIT 1 NC NC 8 2 INA OUTA 7 3 GND VDD 6 4 INB OUTB 5 Figure 1. Si LM27624LN Typical Application Circuit Sillumin Semiconductor Co., Ltd. - .sillumin. Rev1.0, Sep,2023 Si...