DESCRIPTION
The product is in a very small outline surface mount package. PIN CONFIGURATION SOT-23 3 D G S 1 2 FEATURE ! -60V/-3.0A, RDS(ON) = 160m-ohm @VGS = -10V ! -60V/-1.5A, RDS(ON) = 200m-ohm @VGS = -4.5V ! Super high density cell design for extremely low RDS(ON) ! Exceptional on-resistance and maximum DC current capability ! SOT-23 package design 1.Gate 2.Source 3.Drain PART MARKING SOT-23 3 21YA 1 2 Y: Year Code A: Process Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA ST2309ES 2015. Rev.1 ST2309ES P Channel Enhancement Mode MOSFET -3.0A ABSOULTE MAXIMUM RATINGS
(Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Drain-Source Voltage VDSS -60 Gate-Source Voltage Continuous Drain CurrentTJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current VGSS ID IDM ±20 -3.0 -1.3 -9 Continuous Source Current (Diode Conduction) IS Power Dissipation TA=25℃ TA=70℃ PD Operation Junction Temperature TJ -2.2 1.5 0.8 150 Storgae Temperature Range TSTG -55/150 Thermal Resistance-Junction to Ambient RθJA 100 Unit V V A A A W ℃ ℃ ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA ST2309ES 2015.
Stanson Technology
