Datasheet Details
| Part number | ST2309ES |
|---|---|
| Manufacturer | Stanson Technology |
| File Size | 858.63 KB |
| Description | P-Channel Enhancement Mode MOSFET |
| Datasheet | ST2309ES-StansonTechnology.pdf |
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Overview: ST2309ES P Channel Enhancement Mode MOSFET -3.0A.
| Part number | ST2309ES |
|---|---|
| Manufacturer | Stanson Technology |
| File Size | 858.63 KB |
| Description | P-Channel Enhancement Mode MOSFET |
| Datasheet | ST2309ES-StansonTechnology.pdf |
|
|
|
ST2309ES is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required.
| Part Number | Description |
|---|---|
| ST2300 | N-Channel Enhancement Mode MOSFET |
| ST2300SRG | N-Channel Enhancement Mode MOSFET |
| ST2301 | P Channel Enchancement Mode MOSFET |
| ST2301A | P-Channel Enhancement Mode MOSFET |
| ST2302 | 3.6A N-Channel Enchancement Mode MOSFET |
| ST2303 | P Channel Enchancement Mode MOSFET |
| ST2303SRG | P-Channel Enhancement Mode MOSFET |
| ST2304 | 3.2A N-Channel Enhancement Mode MOSFET |
| ST2304SRG | 3.2A N-Channel Enhancement Mode MOSFET |
| ST2305 | P Channel Enchancement Mode MOSFET |