STN6303 Datasheet PDF | Stanson Technology

Stanson Technology STN6303

STN6303 is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer circuits where high-side switching, low in-line power loss and resistance to transients are needed.

Part No.	STN6303
Datasheet	STN6303 Download
Manufacturer	Stanson Technology
Description	MOSFET
Buy	Stock & Price

DESCRIPTION

PIN CONFIGURATION SOT-363 / SC70-6L D1 G2 S2 53YW FEATURE 23V/0.5A, R =DS(ON) 400m-ohm@VGS =4.5V 23V/0.75A, RDS(ON) =550m-ohm@VGS =2.5V Super high density cell design for extremely low RDS(ON) Exceptional low on-resistance and maximum DC current capability SOT-363 / SC70-6L package design S1 G D2 Y: Year W: Process Code ORDERING INFORMATION Part Number Package STN6303 SOT-363 / SC70-6L ※ Process Code : A ~ Z(1~26) ; a ~ z(27~52) STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA Part Marking 53 STN6303 2008. V1 STN6303 Dual N Channel Enhancement Mode MOSFET 1.0A ABSOULTE

MAXIMUM RATINGS

(Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Drain-Source Voltage VDSS 23 Gate-Source Voltage VGSS +/-20 Continuous Drain Current (TJ=150℃) Pulsed Drain Current TA=25℃ TA=70℃ ID 1.0 0.6 IDM 2.5 Continuous Source Current (Diode Conduction) IS 0.6 Power Dissipation Operation Junction Temperature TA=25℃ TA=70℃ PD 0.35 0.19 TJ -55/150 Storage Temperature Range TSTG...