STN6303 Datasheet | Stanson Technology

Dual N Channel Enhancement Mode MOSFET 1.0A DESCRIPTION STN6303 is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook puter circuits where high-side switching, low in-line power loss and resistance to transients are needed. PIN CONFIGURATION SOT-363 / SC70-6L D1 G2 S2 53YW FEATURE 23V/0.5A, R =DS(ON) 400m-ohm@VGS =4.5V 23V/0.75A, RDS(ON) =550m-ohm@VGS =2.5V Super high density cell design for extremely low RDS(ON) Exceptional low on-resistance and maximum DC current capability SOT-363 / SC70-6L package design S1 G D2 Y: Year W: Process Code ORDERING INFORMATION Part Number Package SOT-363 / SC70-6L ※ Process Code : A ~ Z(1~26) ; a ~ z(27~52) STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://.stansontech. Part Marking 53 STN6303 2008. V1 Dual N Channel Enhancement Mode MOSFET 1.0A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Drain-Source Voltage VDSS Gate-Source Voltage VGSS +/-20 Continuous Drain Current...