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STN6303 - MOSFET

Description

STN6303 is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

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Datasheet Details

Part number STN6303
Manufacturer Stanson Technology
File Size 700.41 KB
Description MOSFET
Datasheet download datasheet STN6303 Datasheet

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STN6303 Dual N Channel Enhancement Mode MOSFET 1.0A DESCRIPTION STN6303 is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer circuits where high-side switching, low in-line power loss and resistance to transients are needed. PIN CONFIGURATION SOT-363 / SC70-6L D1 G2 S2 53YW FEATURE 23V/0.5A, R =DS(ON) 400m-ohm@VGS =4.5V 23V/0.75A, RDS(ON) =550m-ohm@VGS =2.
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