Datasheet Details
| Part number | STN6303 |
|---|---|
| Manufacturer | Stanson Technology |
| File Size | 700.41 KB |
| Description | MOSFET |
| Datasheet | STN6303-StansonTechnology.pdf |
|
|
Overview: STN6303 Dual N Channel Enhancement Mode MOSFET 1.0A.
| Part number | STN6303 |
|---|---|
| Manufacturer | Stanson Technology |
| File Size | 700.41 KB |
| Description | MOSFET |
| Datasheet | STN6303-StansonTechnology.pdf |
|
|
|
STN6303 is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.
These devices are particularly suited for low voltage applications such as notebook computer circuits where high-side switching, low in-line power loss and resistance to transients are needed.
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