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STN6335 - 0.95A Dual N-Channel Enhancement Mode MOSFET

Description

STN6335 is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

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Datasheet Details

Part number STN6335
Manufacturer Stanson Technology
File Size 837.21 KB
Description 0.95A Dual N-Channel Enhancement Mode MOSFET
Datasheet download datasheet STN6335 Datasheet

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STN6335 Dual N Channel Enhancement Mode MOSFET 0.95A DESCRIPTION STN6335 is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer circuits where high-side switching, low in-line power loss and resistance to transients are needed. PIN CONFIGURATION SOT-363 / SC70-6L D1 G2 S2 35YW FEATURE � 20V/0.95A, RDS(ON) = 380mΩ@VGS =4.5V � 20V/0.75A, RDS(ON) =450mΩ@VGS =2.5V � 20V/0.65A, RDS(ON) =800mΩ@VGS =1.
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