Datasheet Details
| Part number | STN6335 |
|---|---|
| Manufacturer | Stanson Technology |
| File Size | 837.21 KB |
| Description | 0.95A Dual N-Channel Enhancement Mode MOSFET |
| Datasheet | STN6335-StansonTechnology.pdf |
|
|
Overview: STN6335 Dual N Channel Enhancement Mode MOSFET 0.95A.
| Part number | STN6335 |
|---|---|
| Manufacturer | Stanson Technology |
| File Size | 837.21 KB |
| Description | 0.95A Dual N-Channel Enhancement Mode MOSFET |
| Datasheet | STN6335-StansonTechnology.pdf |
|
|
|
STN6335 is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.
These devices are particularly suited for low voltage applications such as notebook computer circuits where high-side switching, low in-line power loss and resistance to transients are needed.
| Part Number | Description |
|---|---|
| STN6303 | MOSFET |
| STN6562 | 4A Dual N-Channel Enhancement Mode MOSFET |
| STN1012 | MOSFET |
| STN1304 | 2A N-Channel Enhancement Mode MOSFET |
| STN1810 | MOSFET |
| STN18T20 | MOSFET |
| STN2018 | MOSFET |
| STN3446 | MOSFET |
| STN3456 | MOSFET |
| STN3456ST6RG | MOSFET |