STN6335 Datasheet | Stanson Technology

Dual N Channel Enhancement Mode MOSFET 0.95A DESCRIPTION STN6335 is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook puter circuits where high-side switching, low in-line power loss and resistance to transients are needed. PIN CONFIGURATION SOT-363 / SC70-6L D1 G2 S2 35YW FEATURE - 20V/0.95A, RDS(ON) = 380mΩ@VGS =4.5V - 20V/0.75A, RDS(ON) =450mΩ@VGS =2.5V - 20V/0.65A, RDS(ON) =800mΩ@VGS =1.8V - Super high density cell design for extremely low RDS(ON) - Exceptional low on-resistance and maximum DC current capability - SOT-363 / SC70-6L package design S1 G D2 Y: Year A: Process Code ORDERING INFORMATION Part Number Package SOT-363 / SC70-6L ※ Process Code : A ~ Z(1~26) ; a ~ z(27~52) STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://.stansontech. Part Marking YA STN6335 2008. V1 Dual N Channel Enhancement Mode MOSFET 0.95A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical...