STN6335 Datasheet PDF | Stanson Technology

Stanson Technology STN6335

STN6335 is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer circuits where high-side switching, low in-line power loss and resistance to transients are needed.

Part No.	STN6335
Datasheet	STN6335 Download
Manufacturer	Stanson Technology
Description	0.95A Dual N-Channel Enhancement Mode MOSFET
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DESCRIPTION

PIN CONFIGURATION SOT-363 / SC70-6L D1 G2 S2 35YW FEATURE 20V/0.95A, RDS(ON) = 380mΩ@VGS =4.5V 20V/0.75A, RDS(ON) =450mΩ@VGS =2.5V 20V/0.65A, RDS(ON) =800mΩ@VGS =1.8V Super high density cell design for extremely low RDS(ON) Exceptional low on-resistance and maximum DC current capability SOT-363 / SC70-6L package design S1 G D2 Y: Year A: Process Code ORDERING INFORMATION Part Number Package STN6335 SOT-363 / SC70-6L ※ Process Code : A ~ Z(1~26) ; a ~ z(27~52) STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA Part Marking YA STN6335 2008. V1 STN6335 Dual N Channel Enhancement Mode MOSFET 0.95A ABSOULTE

MAXIMUM RATINGS

(Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±12 V TA=25℃ Continuous Drain Current (TJ=150℃) TA=80℃ Pulsed Drain Current 1.2 A ID 0.9 IDM 4 A Continuous Source Current (Diode Conduction) IS 0.6 A Power Dissipation Operation Junction Temperature TA=25℃ TA=70℃ PD 0.35 W 0...