Datasheet Details
| Part number | STN6562 |
|---|---|
| Manufacturer | Stanson Technology |
| File Size | 771.50 KB |
| Description | 4A Dual N-Channel Enhancement Mode MOSFET |
| Datasheet | STN6562-StansonTechnology.pdf |
|
|
Overview: STN6562 Dual N Channel Enhancement Mode MOSFET 4.0A.
| Part number | STN6562 |
|---|---|
| Manufacturer | Stanson Technology |
| File Size | 771.50 KB |
| Description | 4A Dual N-Channel Enhancement Mode MOSFET |
| Datasheet | STN6562-StansonTechnology.pdf |
|
|
|
The STN6562 is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application, such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.
| Part Number | Description |
|---|---|
| STN6303 | MOSFET |
| STN6335 | 0.95A Dual N-Channel Enhancement Mode MOSFET |
| STN1012 | MOSFET |
| STN1304 | 2A N-Channel Enhancement Mode MOSFET |
| STN1810 | MOSFET |
| STN18T20 | MOSFET |
| STN2018 | MOSFET |
| STN3446 | MOSFET |
| STN3456 | MOSFET |
| STN3456ST6RG | MOSFET |