STN6562 Datasheet | Stanson Technology

Dual N Channel Enhancement Mode MOSFET 4.0A DESCRIPTION The STN6562 is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as cellular phone and notebook puter power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION TSOP-6 D1 S1 D2 62YW FEATURE - 30V/4.0A, RDS(ON)=65mohm@VGS=10V - 30V/2.2A, RDS(ON)=75mohm@VGS=4.5V - 30V/1.5A, RDS(ON)=105mohm@VGS=2.5V - Super high density cell design for extremely low RDS(ON) - Exceptional an-resistance and maximum DC current capability - TSOP-6 package design G1 S2 G2 Y: Year A: Week Code n-channel n-channel STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://.stansontech. STP6562 2008. V1 Dual N Channel Enhancement Mode MOSFET 4.0A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ unless otherwise noted ) Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage VGSS Continuous Drain Current (TJ=150℃) Pulsed Drain Current TA=25℃...