Stanson Technology STN6562
The STN6562 is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.| Part No. | STN6562 |
|---|---|
| Datasheet | STN6562 Download |
| Manufacturer |  Stanson Technology |
| Description | 4A Dual N-Channel Enhancement Mode MOSFET |
| Buy | Stock & Price |
DESCRIPTION
PIN CONFIGURATION TSOP-6 D1 S1 D2 62YW FEATURE● 30V/4.0A, RDS(ON)=65mohm@VGS=10V
● 30V/2.2A, RDS(ON)=75mohm@VGS=4.5V
● 30V/1.5A, RDS(ON)=105mohm@VGS=2.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional an-resistance and maximum DC current capability
● TSOP-6 package design G1 S2 G2 Y: Year A: Week Code n-channel n-channel STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA STP6562 2008. V1 STN6562 Dual N Channel Enhancement Mode MOSFET 4.0A ABSOULTE
MAXIMUM RATINGS
(Ta = 25℃ unless otherwise noted ) Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage VGSS Continuous Drain Current (TJ=150℃) Pulsed Drain Current TA=25℃ TA=70℃ ID IDM Continuous Source Current (Diode Conduction) IS Power Dissipation Operation Junction Temperature TA=25℃ TA=70℃ PD TJ Storage Temperature Range TSTG Thermal Resistance-Junction to Ambient T≦10sec Steady State RθJA Typical 30 ±20 4.0 2.0 20 1.7 2.0 1.3 -55/150 -55/150 Unit V V A A A W ℃ ℃ 50 ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA STP6562 2008.
