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WNM2034 - N-Channel MOSFET

General Description

The WNM2034 is N-Channel enhancement MOS Field Effect Transistor.

charge.

This device is suitable for use in DC-DC conversion and power switch applications.

Key Features

  • z z z z z Trench Technology Supper high density cell design Excellent ON resistance for higher DC current Extremely Low Threshold Voltage Small package SOT-23 Configuration (Top View) W34.
  • W34.
  • = Device Code = Month (A~Z) Marking.

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Datasheet Details

Part number WNM2034
Manufacturer TY Semiconductor
File Size 150.38 KB
Description N-Channel MOSFET
Datasheet download datasheet WNM2034 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Product specification WNM2034 N-Channel, 20V, 3.6A, Power MOSFET VDS (V) 20 Rdson (ȍ) 0.037 @ 10V 0.045 @ 4.5V Descriptions The WNM2034 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) SOT-23 D 3 with low gate charge. This device is suitable for use in DC-DC conversion and power switch applications. Standard Product WNM2034 is Pb-free. 1 G 2 S Features z z z z z Trench Technology Supper high density cell design Excellent ON resistance for higher DC current Extremely Low Threshold Voltage Small package SOT-23 Configuration (Top View) W34* W34 * = Device Code = Month (A~Z) Marking Applications z z z z Driver for Relay, Solenoid, Motor, LED etc.