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TSM7104D - 20V Dual P-Channel Enhancement Mode MOSFET

Features

  • — www. DataSheet4U. com — — — — Advanced trench process technology High density cell design for ultra low on-resistance Excellent thermal and electrical capabilities Surface mount Fast switching Block Diagram Ordering Information Part No. TSM7104DCS Packing Tape & Reel Package SOP-8 Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @4.5V. Pulsed Drain Current, VGS @4.5V Maximum Power Dissipation Ta = 25 C.

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Datasheet Details

Part number TSM7104D
Manufacturer Taiwan Semiconductor Company
File Size 166.44 KB
Description 20V Dual P-Channel Enhancement Mode MOSFET
Datasheet download datasheet TSM7104D Datasheet

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Full PDF Text Transcription

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TSM7104D 20V Dual P-Channel Enhancement Mode MOSFET Pin assignment: 1. Source 1 2. Gate 1 3. Source 2 4. Gate 2 5, 6. Drain 2 7, 8. Drain 1 VDS = - 20V RDS (on), Vgs @ - 4.5V, Ids @ - 2.3A =130mΩ RDS (on), Vgs @ - 2.5V, Ids @ - 2.0A =190mΩ Features — www.DataSheet4U.com — — — — Advanced trench process technology High density cell design for ultra low on-resistance Excellent thermal and electrical capabilities Surface mount Fast switching Block Diagram Ordering Information Part No. TSM7104DCS Packing Tape & Reel Package SOP-8 Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @4.5V. Pulsed Drain Current, VGS @4.
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