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TSM7311D - 20V Dual N-Channel MOSFET w/ESD Protected

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  • Trench Process Technology High Density Cell Design for Ultra Low On-resistance ESD Protect 2KV Block Diagram.

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Datasheet Details

Part number TSM7311D
Manufacturer Taiwan Semiconductor Company
File Size 387.96 KB
Description 20V Dual N-Channel MOSFET w/ESD Protected
Datasheet download datasheet TSM7311D Datasheet

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TSM7311D 20V Dual N-Channel MOSFET w/ESD Protected PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 20 22 @ VGS = 4.5V 29 @ VGS = 2.5V SOP-8 Pin Definition: 1. Source 1 8. Drain 2. Gate 1 7. Drain 3. Source 2 6. Drain 4. Gate 2 5. Drain 1 1 2 2 ID (A) 6.5 5.5 Features ● Advance www.DataSheet4U.com ● ● Trench Process Technology High Density Cell Design for Ultra Low On-resistance ESD Protect 2KV Block Diagram Application ● ● Specially Designed for Li-on Battery Packs Battery Switch Application Ordering Information Part No. TSM7311DCS RL Package SOP-8 Packing 2.5Kpcs / 13” Reel Dual N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @4.5V. Pulsed Drain Current, VGS @4.
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