TSM7401 Datasheet | Taiwan Semiconductor

Features Advanced trench process technology High density cell design for ultra low on-resistance Excellent thermal and electrical capabilities Specially designed for Li-ion battery packs. Battery switch application Block Diagram Ordering Information Part No. TSM7401CS Packing Tape & Reel 2,500/per reel Package SOP-8 Absolute Maximum Rating (Ta = 25 o C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @4.5V. Pulsed Drain Current, VGS @4.5V Maximum Power Dissipation Ta = 25 C Ta = 70 o C Operating Junction Temperature Operating Junction and Storage Temperature Range TJ TJ, TSTG o Symbol VDS VGS ID IDM PD Limit 20V ± 12 8 30 2.5 1.3 +150 - 55 to +150 Unit V V A A W o o Thermal Performance Parameter Junction to Foot (Drain) Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Note: Surface mounted on FR4 board t<=10sec. Symbol Rθjf Rθja Limit 30 50 Unit o o C/W C/W 1-1 2003/12 rev. A Electrical Characteristics (Ta = 25 o C unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Drain-Source On-State Resistance .. Conditions VGS = 0V, ID = 250u A VGS = 4.5V, ID = 4.5A VGS = 2.7V, ID = 3.5A VDS = VGS, ID = 250u A VDS = 20V, VGS = 0V VGS = ± 4.5V, VDS = 0V VGS = 4.5V, VDS >= 5V VDS = 10V, ID = 4.5A VDS = 10V, ID = 4.5A, VGS = 4.5V VDD = 10V, RL = 10Ω, ID = 1A, VGEN = 4.5V, RG = 6Ω VDS = 10V, VGS = 0V, f = 1.0MHz Symbol BVDSS RDS(ON) RDS(ON) VGS(TH) IDSS IGSS ID(ON) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss IS Min 20 --0.65 --30 -------------- Typ -20 25 0.85 ---30 15.5 3 5 75 125 600 300 1336 220 130...