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TSM7401
20V N-Channel MOSFET w/ESD Protected
Pin assignment: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain
VDS = 20V RDS (on), Vgs @ 4.5V, Ids @ 4.5A =20mΩ RDS (on), Vgs @ 2.7V, Ids @ 3.5A =25mΩ
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Features
Advanced trench process technology High density cell design for ultra low on-resistance Excellent thermal and electrical capabilities Specially designed for Li-ion battery packs. Battery switch application
Block Diagram
Ordering Information
Part No. TSM7401CS Packing Tape & Reel 2,500/per reel Package SOP-8
Absolute Maximum Rating (Ta = 25 oC unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @4.5V. Pulsed Drain Current, VGS @4.