TSM7N60 Datasheet | Taiwan Semiconductor

Description The TSM7N60 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge. Features - - - - Low RDS(ON) 1.2Ω (Max.) Low gate charge typical @ 28n C (Typ.) Low Crss typical @ 12p F (Typ.) Fast Switching Block Diagram Ordering Information Part No. TSM7N60CZ C0 TSM7N60CI C0 Package TO-220 ITO-220 Packing 50pcs / Tube 50pcs / Tube N-Channel MOSFET Absolute Maximum Rating (Ta = 25o C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current - Avalanche Current (Single) (Note 2) Single Pulse Avalanche Energy (Note 2) Avalanche Current (Repetitive) (Note 1) Repetitive Avalanche Energy (Note 1) Maximum Power Dissipation @Ta = 25 C Operating Junction Temperature Storage Temperature Range - Limited by maximum junction temperature o Symbol VDS VGS Ta = 25ºC Ta = 100ºC ID IDM IAS EAS IAR EAR PD TJ TSTG Limit 600 ±30 7 3.2 28 7 230 7 7.5 65 150 -55 to +150 Unit V V A A A A m J A m J W ºC o 1/7 Version: Preliminary Preliminary TSM7N60 .. 600V N-Channel Power MOSFET Thermal Performance Parameter Thermal Resistance - Junction to Case Thermal Resistance - Junction to Ambient Notes: Surface mounted on FR4 board t ≤ 10sec Symbol RӨJC RӨJA Limit 1.92 83.3 Unit o o C/W C/W Electrical Specifications (Ta = 25o C unless otherwise...