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TSM7N60 - 600V N-Channel Power MOSFET

Description

The TSM7N60 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • Low RDS(ON) 1.2Ω (Max. ) Low gate charge typical @ 28nC (Typ. ) Low Crss typical @ 12pF (Typ. ) Fast Switching Block Diagram Ordering Information Part No. TSM7N60CZ C0 TSM7N60CI C0 Package TO-220 ITO-220 Packing 50pcs / Tube 50pcs / Tube N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current.
  • Avalanche Current (Single) (Note 2) Single Pulse Avalanch.

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Datasheet Details

Part number TSM7N60
Manufacturer Taiwan Semiconductor Company
File Size 628.76 KB
Description 600V N-Channel Power MOSFET
Datasheet download datasheet TSM7N60 Datasheet

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Full PDF Text Transcription

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Preliminary TSM7N60 www.DataSheet4U.com 600V N-Channel Power MOSFET ITO-220 TO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) 600 RDS(on)(Ω) 1.2 @ VGS =10V ID (A) 3.5 General Description The TSM7N60 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge. Features ● ● ● ● Low RDS(ON) 1.2Ω (Max.) Low gate charge typical @ 28nC (Typ.) Low Crss typical @ 12pF (Typ.
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