TSM7N65 Datasheet | Taiwan Semiconductor

Description The TSM7N65 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge. Features - - - - Low RDS(ON) 1.2Ω (Max.) Low gate charge typical @ 32n C (Typ.) Low Crss typical @ 25p F (Typ.) Fast Switching Block Diagram Ordering Information Part No. TSM7N65CZ C0 TSM7N65CI C0 Package TO-220 ITO-220 Packing 50pcs / Tube 50pcs / Tube N-Channel MOSFET Absolute Maximum Rating (Ta = 25o C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current - Single Pulse Avalanche Energy (Note 2) Avalanche Current (Repetitive) (Note 1) Maximum Power Dissipation @ Tc = 25o C Operating Junction Temperature Storage Temperature Range - Limited by maximum junction temperature TO-220 ITO-220 Ta = 25ºC Ta = 100ºC Symbol VDS VGS ID IDM EAS IAR PD TJ TSTG Limit 650 ±30 6.4 3.8 22 216 6 125 30 150 -55 to +150 Unit V V A A A m J A W ºC o 1/9 Version: A09 .. 650V N-Channel Power MOSFET Thermal Performance Parameter Thermal Resistance - Junction to Case Thermal Resistance - Junction to Ambient Notes: Surface mounted on FR4 board t ≤ 10sec TO-220 ITO-220 Symbol RӨJC RӨJA Limit 1.0 4.2 62.5 Unit o C/W C/W...