TSM7900D Datasheet | Taiwan Semiconductor

Features - - - Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance ESD Protect 2KV Block Diagram Application - - Specially Designed for Li-on Battery Packs Battery Switch Application Ordering Information Part No. TSM7900DCQ RL Package TDFN 3x3 Packing T&R Dual N-Channel MOSFET Absolute Maximum Rating (Ta = 25o C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @4.5V. Pulsed Drain Current, VGS @4.5V Continuous Source Current (Diode Conduction) Maximum Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range a,b o o Symbol VDS VGS ID IDM IS PD TJ TJ, TSTG Ta = 25 C Ta = 75 C Limit 20 ±12 6 30 1.4 Unit V V A A A W o o 1.25 0.8 +150 -55 to +150 Thermal Performance Parameter Junction to Foot (Drain) Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board, t ≤ 5 sec. Symbol RӨJF RӨJA Limit 30 50 Unit o o C/W C/W 1/6 Version: A07 20V Dual N-Channel MOSFET w/ESD Protected Electrical Specifications Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain...