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TSM7900D - 20V Dual N-Channel MOSFET w/ESD Protected

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Features

  • Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance ESD Protect 2KV Block Diagram.

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Datasheet Details

Part number TSM7900D
Manufacturer Taiwan Semiconductor Company
File Size 380.84 KB
Description 20V Dual N-Channel MOSFET w/ESD Protected
Datasheet download datasheet TSM7900D Datasheet

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TSM7900D 20V Dual N-Channel MOSFET w/ESD Protected PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 20 32 @ VGS = 4.5V 40 @ VGS = 2.5V TDFN 3x3 Pin Definition: 1. Source 1 2. Gate 1 3. Source 2 4. Gate 2 5, 6, 7, 8. Drain ID (A) 6.5 5.0 www.DataSheet4U.com Features ● ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance ESD Protect 2KV Block Diagram Application ● ● Specially Designed for Li-on Battery Packs Battery Switch Application Ordering Information Part No. TSM7900DCQ RL Package TDFN 3x3 Packing T&R Dual N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @4.5V. Pulsed Drain Current, VGS @4.
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