TSM60NB260 Datasheet PDF - Taiwan Semiconductor N-Channel Power MOSFET Specs

TSM60NB260 - N-Channel Power MOSFET

Datasheet Summary

Features

Super-Junction technology.
High performance, small RDS(ON).
Qg figure of merit (FOM).
High ruggedness performance.
100% UIS tested.
High commutation performance.
Pb-free plating.
Compliant to RoHS Directive 2011/65/EU and in accordance to WEE 2002/96/EC.
Halogen-free according to IEC 61249-2-21 KEY.

Datasheet Details

Part number	TSM60NB260
Manufacturer	Taiwan Semiconductor
File Size	609.23 KB
Description	N-Channel Power MOSFET
Datasheet	TSM60NB260 Datasheet
Additional preview pages of the TSM60NB260 datasheet.

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Full PDF Text Transcription

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TSM60NB260 Taiwan Semiconductor N-Channel Power MOSFET 600V, 13A, 0.26Ω FEATURES ● Super-Junction technology ● High performance, small RDS(ON)*Qg figure of merit (FOM) ● High ruggedness performance ● 100% UIS tested ● High commutation performance ● Pb-free plating ● Compliant to RoHS Directive 2011/65/EU and in accordance to WEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS RDS(on) (max) Qg 600 0.

Published: Oct 15, 2016 |