Datasheet Summary
Taiwan Semiconductor
N-Channel Power MOSFET
600V, 9.5A, 0.38Ω
Features
- Super-Junction technology
- High performance due to small figure-of-merit
- High ruggedness performance
- High mutation performance
- Pb-free plating
- pliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE
UNIT
VDS RDS(on) (max)
Qg
600 V 0.38 Ω 19.4 nC
APPLICATIONS
- Power Supply
- Lighting
TO-251...