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TSM60NB380CH - N-Channel Power MOSFET

Datasheet Summary

Features

  • Super-Junction technology.
  • High performance due to small figure-of-merit.
  • High ruggedness performance.
  • High commutation performance.
  • Pb-free plating.
  • Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC.
  • Halogen-free according to IEC 61249-2-21 KEY.

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Full PDF Text Transcription

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TSM60NB380CH Taiwan Semiconductor N-Channel Power MOSFET 600V, 9.5A, 0.38Ω FEATURES ● Super-Junction technology ● High performance due to small figure-of-merit ● High ruggedness performance ● High commutation performance ● Pb-free plating ● Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS RDS(on) (max) Qg 600 V 0.38 Ω 19.4 nC APPLICATIONS ● Power Supply ● Lighting TO-251 (IPAK) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL IPAK/DPAK Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 1) Pulsed Drain Current (Note 2) TC = 25°C TC = 100°C VDS VGS ID IDM 600 ±30 9.5 6 28.
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