TSM2310 Datasheet | Taiwan Semiconductor

20V N-Channel MOSFET SOT-23 .. Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 33 @ VGS = 4.5V 20 40 @ VGS = 2.5V 100 @ VGS = 1.8V ID (A) 4 3.2 2.0 Features - - Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram Application - - Load Switch PA Switch Ordering Information Part No. TSM2310CX RF Package SOT-23 Packing 3Kpcs / 7” Reel N-Channel...