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TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA2065
High-Speed Switching Applications DC-DC Converter Applications Strobe Applications
2SA2065
Unit: mm
• High DC current gain: hFE = 200 to 500 (IC = −0.15 A) • Low collector-emitter saturation voltage: VCE (sat) = −0.14 V (max) • High-speed switching: tf = 37 ns (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
−20
V
Collector-emitter voltage
VCEO
−20
V
Emitter-base voltage
VEBO
−7
V
Collector current
Base current Collector power dissipation
DC Pulse
t = 10 s DC
IC
−1.5
A
ICP
−2.5
IB
−150
mA
PC
750
mW
(Note 1)
500
JEDEC JEITA TOSHIBA
― ― 2-3S1C
Junction temperature
Tj
150
°C
Weight: 0.01 g (typ.
2SA2065 Datasheet
