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TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA2069
High-Speed Switching Applications DC-DC Converter Applications
2SA2069
Unit: mm
• High DC current gain: hFE = 200 to 500 (IC = −0.15 A) • Low collector-emitter saturation voltage: VCE (sat) = −0.14 V (max) • High-speed switching: tf = 37 ns (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC Pulse
Base current
Collector power dissipation
t = 10 s DC
Junction temperature
Storage temperature range
VCBO VCEO VEBO
IC ICP IB PC (Note 1)
Tj Tstg
−20 −20 −7 −1.5 −2.5 −150 2.0 1.0 150 −55 to 150
V V V
A
mA
W
°C °C
Note 1: Mounted on an FR4 board (glass epoxy, 1.
2SA2069 Datasheet
