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TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA2070
High-Speed Switching Applications DC-DC Converter Applications
2SA2070
Unit: mm
• High DC current gain: hFE = 200 to 500 (IC = -0.1 A) • Low collector-emitter saturation voltage: VCE (sat) =- 0.20 V (max) • High-speed switching: tf = 70 ns (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC Pulse
Base current
Collector power dissipation
DC t = 10 s
Junction temperature
Storage temperature range
VCBO VCEO VEBO
IC ICP IB
PC (Note 1)
Tj Tstg
−50 −50 −7 −1.0 −2.0 −0.1 1.0 2.0 150 −55 to 150
V V V
A
A
W
°C °C
JEDEC
―
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.
2SA2070 Datasheet
