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2SD2480
TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington power transistor)
2SD2480
Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications
Unit: mm
· High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) · Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC Pulse
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO VCEO VEBO
IC ICP IB PC Tj Tstg
Equivalent Circuit
Rating
100 100
8 2 3 0.5 1.3 150 −55 to 150
Unit V V V
A
A W °C °C
COLLECTOR
BASE
≈ 4 kΩ
≈ 800 Ω
EMITTER
JEDEC
―
JEITA
―
TOSHIBA
2-8M1A
Weight: 0.
2SD2480 Datasheet
