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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SD2481
Pulse Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications
2SD2481
Unit: mm
· High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA) · Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range
Symbol
VCBO VCEO VEBO
IC IB PC Tj Tstg
Rating
30 30 10 1.5 0.15 1.3 150 −55 to 150
Unit
V V V A A W °C °C
Equivalent Circuit
BASE
COLLECTOR
JEDEC
―
JEITA
―
TOSHIBA
2-8M1A
Weight: 0.55 g (typ.
2SD2481 Datasheet
