| Part number | GT45F123 |
|---|---|
| Datasheet | GT45F123-ToshibaSemiconductor.pdf |
| File Size | 241.66 KB |
| Manufacturer | Toshiba |
| Description | Insulated Gate Bipolar Transistor |
|
|
GT45F123 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT45F123 For PDP-TV Applications 5th generation (trench gate structure) IGBT Enhancement-mode Low input capacitance: Cies = 2700pF (typ.) Peak collector current: ICP = 200 A (max) TO-220SIS package Unit:.
| Part Number | Description |
|---|---|
| GT40G121 | Silicon N-Channel IGBT |
| GT40J321 | Silicon N-Channel IGBT |
| GT40J322 | Silicon N-Channel IGBT |
| GT40M101 | SILICON N-CHANNEL IGBT |
| GT40M301 | Silicon N-Channel MOSFET |
| GT40Q321 | Silicon N-Channel IGBT |
| GT40Q322 | Silicon N-Channel IGBT |
| GT40Q323 | Silicon N-Channel IGBT |
| GT40T101 | Silicon N-Channel MOSFET |
| GT40T301 | Silicon N-Channel IGBT |
