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GT45F123
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT45F123
For PDP-TV Applications
• • • • • 5th generation (trench gate structure) IGBT Enhancement-mode Low input capacitance: Cies = 2700pF (typ.) Peak collector current: ICP = 200 A (max) TO-220SIS package Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Collector power dissipation Junction temperature Storage temperature range Pulse (Note 1) Tc=25°C Ta=25°C Symbol VCES VGES ICP PC Tj Tstg Rating 300 ± 30 200 26 2 150 −55 to 150 Unit V V A 1. Gate W °C °C 2. Collector 3. Emitter
JEDEC
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JEITA Note: Using continuously under heavy loads (e.g.
GT45F123 Datasheet
