| Part number | GT45F123 |
|---|---|
| Download | GT45F123 Datasheet (PDF) |
| File Size | 241.66 KB |
| Manufacturer | Toshiba |
| Description | Insulated Gate Bipolar Transistor |
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| Part Number | Description |
|---|---|
| GT40G121 | Silicon N-Channel IGBT |
| GT40J321 | Silicon N-Channel IGBT |
| GT40J322 | Silicon N-Channel IGBT |
| GT40M101 | SILICON N-CHANNEL IGBT |
| GT40M301 | Silicon N-Channel MOSFET |
GT45F123 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT45F123 For PDP-TV Applications 5th generation (trench gate structure) IGBT Enhancement-mode Low input capacitance: Cies = 2700pF (typ.) Peak collector current: ICP = 200 A (max) TO-220SIS package Unit:.
