Datasheet Summary
Discrete IGBTs Silicon N-Channel IGBT
1. Applications
- Dedicated to Voltage-Resonant Inverter Switching Applications The product(s) described herein should not be used for any other application. Note:
2. Features
(1) (2) (3) (4) 6.5th generation The RC-IGBT consists of a freewheeling diode monolithically integrated in an IGBT chip. Enhancement mode High-speed switching IGBT : tf = 0.18 µs (typ.) (IC = 50 A) FWD : trr = 0.45 µs (typ.) (IF = 15 A) (5) (6) Low saturation voltage : VCE(sat) = 1.7 V (typ.) (IC = 50 A) High junction temperature : Tj = 175 (max)
3. Packaging and Internal Circuit
1: Gate 2: Collector 3: Emitter
TO-3P(N)
2011-06-10 Rev.1.0
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