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GT50MR21 - silicon N-channel IGBT

Features

  • (1) (2) (3) (4) 6.5th generation The RC-IGBT consists of a freewheeling diode monolithically integrated in an IGBT chip. Enhancement mode High-speed switching IGBT : tf = 0.18 µs (typ. ) (IC = 50 A) FWD : trr = 0.45 µs (typ. ) (IF = 15 A) (5) (6) Low saturation voltage : VCE(sat) = 1.7 V (typ. ) (IC = 50 A) High junction temperature : Tj = 175 (max) 3. Packaging and Internal Circuit 1: Gate 2: Collector 3: Emitter TO-3P(N) 1 2011-06-10 Rev.1.0 GT50MR21 4. Absolute Maximum Ratings (Note) (Ta.

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Datasheet Details

Part number GT50MR21
Manufacturer Toshiba
File Size 213.98 KB
Description silicon N-channel IGBT
Datasheet download datasheet GT50MR21 Datasheet

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Full PDF Text Transcription

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GT50MR21 Discrete IGBTs Silicon N-Channel IGBT GT50MR21 1. Applications • Dedicated to Voltage-Resonant Inverter Switching Applications The product(s) described herein should not be used for any other application. Note: 2. Features (1) (2) (3) (4) 6.5th generation The RC-IGBT consists of a freewheeling diode monolithically integrated in an IGBT chip. Enhancement mode High-speed switching IGBT : tf = 0.18 µs (typ.) (IC = 50 A) FWD : trr = 0.45 µs (typ.) (IF = 15 A) (5) (6) Low saturation voltage : VCE(sat) = 1.7 V (typ.) (IC = 50 A) High junction temperature : Tj = 175 (max) 3. Packaging and Internal Circuit 1: Gate 2: Collector 3: Emitter TO-3P(N) 1 2011-06-10 Rev.1.0 GT50MR21 4.
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