Click to expand full text
GT50N321
NIGBT
GT50N321
○ ○ 4
• • • • FRD 。 。 。 IGBT : tf = 0.25 μs () (IC = 60 A) FRD : trr = 0.8 μs () (di/dt = −20 A/μs) 。 VCE (sat) = 2.5 V () (IC = 60 A) : mm
(Ta = 25°C)
V V A
･ ･ DC 1 ms DC 1 ms
VCES VGES IC ICP IF IFP PC Tj Tstg
1000 ±25 50 120 15 120 156 150 −55~150
A W °C °C
JEDEC JEITA
― ― 2-16C1C
(Tc = 25°C)
: 4.6 g ()
:
(//) 、 ( /、 ) 、 。 () (、) 、。
TOSHIBA
GT50N321
() No. (: : )
1
2006-10-31
GT50N321
(Ta = 25°C)
VGE = ±25 V, VCE = 0 VCE = 1000 V, VGE = 0 IC = 60 mA, VCE = 5 V IC = 60 A, VGE = 15 V VCE = 10 V, VGE = 0, f = 1 MHz VCC = 600 V, IC = 60 A VGG = ±15 V, RG = 51 Ω ( 1) IF = 15 A, VGE = 0 IF = 15 A, VGE = 0, di/dt = −20 A/μs ⎯ ⎯ ⎯ ⎯ 3.0 ⎯ ⎯ ⎯ ⎯ ⎯ 2.
GT50N321 Datasheet
