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GT50N322A - Silicon N-Channel IGBT

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Part number GT50N322A
Manufacturer Toshiba Semiconductor
File Size 138.32 KB
Description Silicon N-Channel IGBT
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GT50N322A TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50N322A Voltage Resonance Inverter Switching Application Fifth Generation IGBT • • • • FRD included between emitter and collector Enhancement mode type High speed IGBT : tf = 0.10 μs (typ.) (IC = 60 A) FRD : trr = 0.8 μs (typ.) (di/dt = −20 A/μs) Low saturation voltage: VCE (sat) = 2.2 V (typ.) (IC = 60 A) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms DC 1ms Symbol VCES VGES IC ICP IF IFP PC Tj Tstg Rating 1000 ± 25 50 120 15 120 156 150 −55 to 150 Unit V V A JEDEC A ⎯ ⎯ 2-16C1C Diode forward current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature JEITA TOSHIBA W °C °C Weight: 4.
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