| Part number | GT50N322A |
|---|---|
| Datasheet | GT50N322A-ToshibaSemiconductor.pdf |
| File Size | 138.32 KB |
| Manufacturer | Toshiba |
| Description | Silicon N-Channel IGBT |
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GT50N322A TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50N322A Voltage Resonance Inverter Switching Application Fifth Generation IGBT FRD included between emitter and collector Enhancement mode type High speed IGBT : tf = 0.10 μs (typ.) (IC = 60 A) FRD : trr = 0.8 μs (typ.) (di/dt = −20 A/μs) Low saturation voltage:.
| Part Number | Description |
|---|---|
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