Datasheet Summary
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
Voltage Resonance Inverter Switching Application Fifth Generation IGBT
- -
- - FRD included between emitter and collector Enhancement mode type High speed IGBT : tf = 0.10 μs (typ.) (IC = 60 A) FRD : trr = 0.8 μs (typ.) (di/dt =
- 20 A/μs) Low saturation voltage: VCE (sat) = 2.2 V (typ.) (IC = 60 A) Unit:...