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SSM3J117TU
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
SSM3J117TU
DC-DC converter Applications
High-Speed Switching Applications
• 4 V drive
• Low ON-resistance:
RDS(ON) = 225 mΩ (max) (@VGS = −4 V) RDS(ON) = 117 mΩ (max) (@VGS = −10 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain–source voltage Gate–source voltage
Drain current
DC Pulse
Power dissipation
Channel temperature Storage temperature range
VDS
−30
V
VGSS
±20
V
ID
−2 A
IDP
−4
PD (Note 1)
800
mW
PD (Note 2)
500
Tch
150
°C
Tstg
−55 to 150
°C
Note:
Note 1: Note 2:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.
SSM3J117TU Datasheet
