The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
SSM3J118TU
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
SSM3J118TU
High-Speed Switching Applications
• 4 V drive
• Low ON-resistance:
Ron = 480 mΩ (max) (@VGS = −4 V) Ron = 240 mΩ (max) (@VGS = −10 V)
Absolute Maximum Ratings (Ta = 25°C)
2.1±0.1 1.7±0.1
Unit: mm
0.3-+00..015
2.0±0.1 0.65±0.05
0.166±0.05
Characteristic
Symbol
Rating
Unit
Drain–source voltage Gate–source voltage
Drain current
DC Pulse
Drain power dissipation
Channel temperature Storage temperature range
VDS
−30
V
VGSS
± 20
V
ID
−1.4 A
IDP
−2.8
PD (Note 1)
800
mW
PD (Note 2)
500
Tch
150
°C
Tstg
−55 to 150
°C
Note:
Note 1: Note 2:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.
SSM3J118TU Datasheet
