SSM3J118TU Overview
SSM3J118TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J118TU High-Speed Switching Applications 4 V drive Low ON-resistance: Ron = 480 mΩ (max) (@VGS = −4 V) Ron = 240 mΩ (max) (@VGS = −10 V) Ratings (Ta = 25°C) 2.1±0.1 1.7±0.1 Unit: Using continuously under heavy loads (e.g.