SSM4K27CT datasheet by Toshiba.
| Part number | SSM4K27CT |
|---|---|
| Datasheet | SSM4K27CT_ToshibaSemiconductor.pdf |
| File Size | 259.71 KB |
| Manufacturer | Toshiba |
| Description | Silicon N-Channel MOSFET |
|
|
SSM4K27CT TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅢ) SSM4K27CT ○ Switching Applications Small package Low on-resistance: RDS(ON) = 205 mΩ (max) (@VGS = 4.0 V) RDS(ON) = 260 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 390 mΩ (max) (@VGS = 1.8 V) Ratings (Ta = 25°C) Unit: mm Characteristics Symbol Rating Unit Drain-Source voltage VDSS 20 V Gate-Source voltage VGSS ±12 V Drain current DC ID Pulse IDP 0.5...
| Part Number | Description |
|---|---|
| SSM3J01F | Silicon P-Channel MOSFET |
| SSM3J01T | TOSHIBA Field Effect Transistor Silicon P Channel MOS Type |
| SSM3J02F | TOSHIBA Field Effect Transistor Silicon P Channel MOS Type |
| SSM3J02T | TOSHIBA Field Effect Transistor Silicon P Channel MOS Type |
| SSM3J05FU | Power Management Switch High Speed Switching Applications |
| SSM3J09FU | Silicon P-Channel MOSFET |
| SSM3J108TU | Field Effect Transistor Silicon P-Channel MOS Type |
| SSM3J109TU | Silicon P-Channel MOSFET |
| SSM3J110TU | Field-Effect Transistor Silicon P-Channel MOS Type |
| SSM3J111TU | Field-Effect Transistor Silicon P-Channel MOS Type |
