SSM4K27CT
SSM4K27CT is Silicon N-Channel MOSFET manufactured by Toshiba.
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅢ)
○ Switching Applications
- Small package
- Low on-resistance:
RDS(ON) = 205 mΩ (max) (@VGS = 4.0 V) RDS(ON) = 260 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 390 mΩ (max) (@VGS = 1.8 V)
Absolute Maximum Ratings (Ta = 25°C)
Unit: mm
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
VDSS
Gate-Source voltage
VGSS
±12
Drain current
Pulse
0.5 A
Power dissipation
PD (Note 1)
400 m W
Channel temperature
Tch
°C
Storage temperature range
Tstg
- 55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
JEDEC
⎯ temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
JEITA...
